Electro-thermal limitations and device degradation of SiGe HBTs with emphasis on circuit performance (Invited)

Authors :: Fregonese, Sebastien
Chhandak, Mukherjee
Rucker, Holger
Chevalier, Pascal
Fischer, Gerhard
Céli, Didier
DENG, Marina
Marc, François
Maneux, Cristell
Zimmer, Thomas
Centre National de la Recherche Scientifique (CNRS)
Laboratoire de l'intégration, du matériau au système (IMS)
Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1
Innovations for High Performance Microelectronics (IHP)
STMicroelectronics [Crolles] (ST-CROLLES)
Université de Bordeaux (UB)
Source :: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, United States
Publication Year :: 2021
Publisher :: HAL CCSD, 2021.
Abstract: International audience

Subjects :: [SPI]Engineering Sciences [physics]
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS

Language :: English
Database :: OpenAIRE
Journal :: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Dec 2021, Monterey, United States
Accession number :: edsair.dedup.wf.001..78496fb38e327c73a4e730a209bb7bdd

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