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Electrical properties of 4H-SiC based Schottky diode
- Source :
- Politecnico di Torino-IRIS, Scopus-Elsevier
Details
- Database :
- OpenAIRE
- Journal :
- Politecnico di Torino-IRIS, Scopus-Elsevier
- Accession number :
- edsair.dedup.wf.001..797833511b06043e3503ffb7fcb9055b