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Gap state transport in annealed low temperature grown GaAs inferred from the properties of Al/LT GaAs/n +GaAs Schottky diodes
Details
- Database :
- OpenAIRE
- Journal :
- Scopus-Elsevier
- Accession number :
- edsair.dedup.wf.001..7a9ee0199aed7e9acf5d0960d1b4d883