Enhancement of VCSEL performances with a new bonding process

National audience; The development of power efficient vertical-cavity surface-emitting lasers (VCSELs) in the 1.55µm range, with relatively high output power (>1mW) and enhanced thermal dissipation is still challenging, but would represent a real breakthrough for the scientific community, with important perspectives in different areas of fundamental research and applied physics (WDM and FTTH networks, gas sensing and deformation detectors, microwaves, etc.). In this context, a novel bonding technique is presented in this work. This technique, named Through Silicon Holes Electroplated Copper (TSHEC) process, has been validated in the case of quantum wells-based optically-pumped vertical-cavity surface-emitting lasers (QW-OP-VCSELs), where an emission power exceeding 2mW at 20°C has been obtained for a device integrating bottom hybrid Bragg mirrors of 20µm of diameter.