High mobility nanometer-scaled CMOS: opportunities and challenges

Authors :: Ernst, T.
Andrieu, F.
Weber, O.
Dupré, C.
Faynot, O.
Ducroquet, F.
Clavelier, L.
Hartmann, J. M.
Barraud, S.
gerard ghibaudo
Deleonibus, S.
Domenget, Chahla
Institut de Microélectronique, Electromagnétisme et Photonique (IMEP)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)
Source :: Third International SiGe Technology and Device Meeting (ISTDM), Third International SiGe Technology and Device Meeting (ISTDM), May 2006, Princeton, New Jersey, United States, HAL
Publication Year :: 2006
Publisher :: HAL CCSD, 2006.

Subjects :: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Language :: English
Database :: OpenAIRE
Journal :: Third International SiGe Technology and Device Meeting (ISTDM), Third International SiGe Technology and Device Meeting (ISTDM), May 2006, Princeton, New Jersey, United States, HAL
Accession number :: edsair.dedup.wf.001..a652c3814476c899ace6a71f6d7a27fe