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Experiments and simulations for the study of the brittle to ductile transition at low size in silicon
- Source :
- Extended Defects in Semiconductors, Extended Defects in Semiconductors, Sep 2016, Saint Aygulf, France, HAL
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- International audience
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Extended Defects in Semiconductors, Extended Defects in Semiconductors, Sep 2016, Saint Aygulf, France, HAL
- Accession number :
- edsair.dedup.wf.001..a8b4c0f7aa90aebd5d82ecb96ed9056e