Double resonance Raman effects in InN nanowires

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E 1(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E 1(LO)/E 2 h intensity ratio increases with the excitation wavelength more rapidly than the A 1(LO)/E 2 h ratio measured in InN thin films. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.