Metal oxide semiconductor interface and transmission electron microscopy characterization

Authors :: Araujo, Daniel
Pernot, Julien
PERNOT, JULIEN
Satoshi Koizumi
Hitoshi Umezawa
Julien Pernot
Mariko Suzuki
Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cádiz, Puerto Real, Cádiz, Spain.
Semi-conducteurs à large bande interdite (SC2G )
Institut Néel (NEEL)
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Source :: Power Electronics Device Applications of Diamond Semiconductors, Satoshi Koizumi; Hitoshi Umezawa; Julien Pernot; Mariko Suzuki. Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing, 2018
Publication Year :: 2018
Publisher :: HAL CCSD, 2018.
Abstract: International audience

Subjects :: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
ComputingMilieux_MISCELLANEOUS
[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

Language :: English
Database :: OpenAIRE
Journal :: Power Electronics Device Applications of Diamond Semiconductors, Satoshi Koizumi; Hitoshi Umezawa; Julien Pernot; Mariko Suzuki. Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing, 2018
Accession number :: edsair.dedup.wf.001..bee2392fdad4ebcad86f618929ceb3b2

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