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Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker

Authors :
Ma, Thi Thuong Huyen
Yahoui, Hamed
Baccar El Boubkari, Fedia
Morel, Hervé
Vu, Hoang-Giang
Siauve, Nicolas
Ampère, Département Méthodes pour l'Ingénierie des Systèmes (MIS)
Ampère (AMPERE)
École Centrale de Lyon (ECL)
Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL)
Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)
Ampère, Département Energie Electrique (EE)
Electric Power University (EPU)
Ampère, Publications
Source :
Proceedings of the International Conference on COmponents and SYStems for DC Grids, COSYS-DC, COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique
Publication Year :
2017
Publisher :
HAL CCSD, 2017.

Abstract

International audience; Recently, solid state DC circuit breaker (SSCB) using normally-on SiC-JFET offers a great protection device for DC microgrid due to its fast response time (in tens of microseconds) and low on-state losses. At the simulation stage, an appropriate model of the SiC-JFET should be built in order to reflect correctly behaviors of the breaker during faults and clearing faults processes. For instance, the fault clearing time should be in tens of microseconds. This paper presents the development of a novel model for commercial normally-on SiC-JFET in solid state circuit breaker application. The parameters of the model are first extracted from the SiC-JFET experimental data. Afterward, the operation of a SiC-JFET in a prototype of solid state breaker is evaluated by comparing the static and dynamic characteristics of SiC-JFET model, which is simulated in Matlab/Simulink, to the experimental measurement. Good agreement between simulation and experiment has been achieved and confirms the validity of the built model of the SiC JFET.

Details

Language :
English
Database :
OpenAIRE
Journal :
Proceedings of the International Conference on COmponents and SYStems for DC Grids, COSYS-DC, COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique
Accession number :
edsair.dedup.wf.001..cf857de50910501e6430381e8f90ab7f