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Static and dynamic properties of low-temperature order in the one-dimensional semiconductor (NbSe4)3I

Authors :
Dominko, Damir
Vdović, Silvije
Skenderović, Hrvoje
Starešinić, Damir
Biljaković, Katica
Ristić, Davor
Ivanda, Mile
Lorenzo, Jose Emilio
Demsar, Jure
Institut of Physics-Zagreb
Institut of Physics -Croatia
Magnétisme et Supraconductivité (MagSup )
Institut Néel (NEEL)
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Source :
Physical Review B, Physical Review B, American Physical Society, 2016, 94 (10), pp.104113. ⟨10.1103/PhysRevB.94.104113⟩
Publication Year :
2016
Publisher :
HAL CCSD, 2016.

Abstract

International audience; We investigated static and dynamic lattice properties in a quasi-one-dimensional charge-ordered semiconductor (NbSe 4) 3 I by using Raman, femtosecond pump-probe spectroscopy and x-ray diffraction. In addition to a welldocumented pseudo-Jahn-Teller ferrodistortive structural transition at T C = 274 K, where the displacements of Nb ions lead to ferroelectric (FE) in-chain polarization with opposite direction in adjacent chains, all methods suggest an additional lowering of symmetry at T * ≈ 160 K. Although antiferroelectric (AFE) phase is partially formed at T C , our results consistently point to an enhancement of the interchain order at T * , thus leading to AFE order-disorder transition, as supported by the earlier dielectric and structural studies.

Details

Language :
English
ISSN :
24699950 and 24699969
Database :
OpenAIRE
Journal :
Physical Review B, Physical Review B, American Physical Society, 2016, 94 (10), pp.104113. ⟨10.1103/PhysRevB.94.104113⟩
Accession number :
edsair.dedup.wf.001..de313341baf12c0eac954bc0e5bbf4bc
Full Text :
https://doi.org/10.1103/PhysRevB.94.104113⟩