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Study of Pockels effect in strained silicon
- Source :
- 2017 IONS Paris 2017, 2017 IONS Paris 2017, Jun 2017, Palaiseau, France. 2017
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- International audience
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2017 IONS Paris 2017, 2017 IONS Paris 2017, Jun 2017, Palaiseau, France. 2017
- Accession number :
- edsair.dedup.wf.001..e6f73b38ed68c05d2fa3dae766cfed9e