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Erratum: Strain relaxation mechanism of InGaN thin film grown on m ‐GaN [Phys. Status Solidi C 8 , 444–446 (2011)]
- Source :
- physica status solidi c. 9:1856-1856
- Publication Year :
- 2012
- Publisher :
- Wiley, 2012.
-
Abstract
- The signs of the off-angle toward +c-direction of the miscut m-GaN substrates indicated in Figs. 1 and 2 and in the text should be reversed. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Details
- ISSN :
- 16101642 and 18626351
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- physica status solidi c
- Accession number :
- edsair.doi...........0023e8d2b0c958bd0cf53dae7b433b97
- Full Text :
- https://doi.org/10.1002/pssc.201270001