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Pressure-induced photoconductivity enhancement and positive–negative switch in bulk silicon
- Source :
- Applied Physics Letters. 121:042102
- Publication Year :
- 2022
- Publisher :
- AIP Publishing, 2022.
-
Abstract
- Silicon is a long-standing photosensitive material because of its unique photoelectronic properties and mature manufacturing technology. However, silicon photodetectors are generally limited by weak photoresponse in the near-infrared region. In this work, pressure is used as an effective means of tuning the photoresponse of silicon, specifically in the near-infrared region. Silicon has two different types of photoresponse under pressure. In the pressure range from 1 atm to 10 GPa, huge pressure-enhanced photocurrent is observed under illumination by a xenon lamp and near-infrared light (1064 nm). At 10 GPa, the photocurrent density ( Jph), responsivity ( R), and external quantum efficiency are increased 40-fold from those at 1.2 GPa. Interestingly, above 10 GPa, a unique pressure-induced positive–negative photoresponse switch is found along with the phase transformation from the semiconductive phase (Si I) to the metallic phase ( β-tin). Further experiments show that the photothermal effect is the main factor for negative photoresponse. All these pressure-induced properties give silicon more possibilities in the further design of visible and infrared photodetectors.
- Subjects :
- Physics and Astronomy (miscellaneous)
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 121
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........002f312778e4313de9aa4bfb6665a1be