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Low temperature and selective growth of β‐SiC using the SiH2Cl2/i‐C4H10/HCl/H2gas system

Low temperature and selective growth of β‐SiC using the SiH2Cl2/i‐C4H10/HCl/H2gas system

Authors :
Yoshio Ohshita
Source :
Applied Physics Letters. 57:605-607
Publication Year :
1990
Publisher :
AIP Publishing, 1990.

Abstract

β‐SiC is grown on a silicon substrate by the chemical vapor deposition method using the SiH2Cl2/i‐C4H10/H2/HCl gas system. Stoichiometric β‐SiC films are obtained with high growth rate at a low temperature of 900 °C. Highly (111) oriented β‐SiC polycrystal is grown on a Si(111) substrate. Moreover, using the above‐mentioned gas system, β‐SiC selective growth is attained on a Si substrate, with no nucleation on the SiO2 area. This letter discusses the i‐C4H10 effects and selective growth condition.

Details

ISSN :
10773118 and 00036951
Volume :
57
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........004353cb37b54574146d31b09fdadc0c
Full Text :
https://doi.org/10.1063/1.103611