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Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis

Authors :
W. E. Spicer
C. Y. Su
D. Kanani
Antoine Kahn
P. W. Chye
Peter Mark
I. Lindau
Source :
Surface Science. 87:325-332
Publication Year :
1979
Publisher :
Elsevier BV, 1979.

Abstract

Cleaved GaAs(110) surfaces were exposed to oxygen (106 − 5 × 1010 L) and analysed by LEED and UPS. Very important changes in the electron diffraction occur at 108 L and the analysis of the LEED pattern shows a bulk-like diffraction superposed on a high background, implying that a thin layer (1–3 A) disordered by the oxidation covers the GaAs lattice relaxted to its bulk structure.

Subjects

Subjects :
Diffraction
congenital, hereditary, and neonatal diseases and abnormalities
Thin layer
nutritional and metabolic diseases
chemistry.chemical_element
Surfaces and Interfaces
Condensed Matter Physics
Oxygen
Molecular physics
Surfaces, Coatings and Films
Crystallography
chemistry
Electron diffraction
Lattice (order)
Materials Chemistry

Details

ISSN :
00396028
Volume :
87
Database :
OpenAIRE
Journal :
Surface Science
Accession number :
edsair.doi...........007aead0c0256286f1a93a2102a5b493
Full Text :
https://doi.org/10.1016/0039-6028(79)90532-6
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