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Do the grain boundaries of β-In2S3 thin films have a role in sub-band-gap photosensitivity to 632.8nm?

Authors :
Deepti Jain
C. Sudha Kartha
Teny Theresa John
R. Jayakrishnan
K.P. Vijayakumar
L. S. Sharath Chandra
V. Ganesan
Source :
Journal of Applied Physics. 103:053106
Publication Year :
2008
Publisher :
AIP Publishing, 2008.

Abstract

Highly photoconducting β-In2S3 thin films with conducting grain boundaries were obtained, using “chemical spray pyrolysis” technique. By varying the atomic ratio of the precursor solution used for spray pyrolysis, the photoconductivity of these films could be tailored. Conducting grain boundaries were found only for samples with a specific stoichiometry and these films exhibited photoresponse to intrinsic and extrinsic excitation wavelengths in the range of 325–532nm. Postdeposition vacuum annealing of these films enhanced the grain boundary conductivity, caused the films to exhibit persistent photoconductivity for both intrinsic and extrinsic excitations and extended the extrinsic photoresponse to wavelengths beyond 632.8nm. Photoresponse to excitation wavelength of 632.8nm was observed in films with and without conducting grain boundaries which proved that the extrinsic photoresponse to this wavelength was an effect associated with the defect chemistry of the β-In2S3.

Details

ISSN :
10897550 and 00218979
Volume :
103
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........00c1facc4d5c945f023b6351bc460689
Full Text :
https://doi.org/10.1063/1.2841488