Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators

A simple method to form ultra-thin (2 and Si3N4. We found that decreasing the Ge thickness reduces the grain size and increases the grain boundary barrier height, causing carrier mobility degradation. We examined two methods, known effective to enhance the grain size in the thicker Ge (>100 nm). As a result, a relatively high Hall hole mobility (59 cm2 V−1 s−1) has been achieved with a 20 nm thick polycrystalline Ge layer on Si3N4, which is the highest value among the previously reported works.