Epitaxial growth of single-crystalline silicon–germanium on silicon by aluminium-assisted crystallization

Aluminium-assisted crystallization is used to grow single-crystalline SixGe1−x film epitaxially on Si substrate at a relatively low temperature (350–450 °C). Investigation of the mechanism by which Al film causes epitaxial growth of SixGe1−x suggests a four-step growth process is involved. The composition of the SixGe1−x film can be controlled by the annealing conditions. This SixGe1−x film can be used as a buffer layer for the epitaxial growth of Ge on Si or as a virtual substrate for the fabrication of III–V devices.