Back to Search
Start Over
A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices
- Source :
- 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
- Publication Year :
- 2021
- Publisher :
- IEEE, 2021.
-
Abstract
- We have experimentally verified a compact trench-assisted space-modulated junction termination extension (TSM-JTE) structure which has been designed for high voltage SiC devices. The proposed termination design introduces shallow trench structures into the conventional JTE implanted region, effectively creating a multi-zone JTE with a single implant, and hence greatly broadens the process window for a JTE termination. The TSM-JTE structure is compact and cost effective especially at higher voltages (≥ 10 kV) as it consumes less chip area while requiring only a single implant for the termination region. In this paper, 5 kV and 10 kV SiC PiN diodes have been fabricated and characterized.
- Subjects :
- 010302 applied physics
Materials science
business.industry
020208 electrical & electronic engineering
PIN diode
High voltage
02 engineering and technology
Integrated circuit
Chip
01 natural sciences
law.invention
chemistry.chemical_compound
chemistry
law
0103 physical sciences
Trench
0202 electrical engineering, electronic engineering, information engineering
Silicon carbide
Optoelectronics
Process window
business
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Accession number :
- edsair.doi...........01e15f3e4f3a7a2f90ac7eb2c9e89433
- Full Text :
- https://doi.org/10.23919/ispsd50666.2021.9452270