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Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies

Authors :
Jing Guo
Balasubramanian S. Pranatharthi Haran
Miaomiao Wang
Paul C. Jamison
V. Basker
James Chingwei Li
Richard G. Southwick
Vijay Narayanan
Shanti Pancharatnam
Dechao Guo
Muthumanickam Sankarapandian
Nicolas Loubet
Ruqiang Bao
Huimei Zhou
Huiming Bu
Koji Watanabe
Mukesh Khare
Jingyun Zhang
James J. Demarest
Source :
2020 IEEE Symposium on VLSI Technology.
Publication Year :
2020
Publisher :
IEEE, 2020.

Abstract

We report that n-dipole and p-dipole (dual dipoles) can be co-integrated to provide a more flexible volumeless multiple threshold voltage(multi-Vt) solution in FinFET and Nanosheet (NS) technologies. The p-dipole process for dual dipoles co-integration is identified. When the Vt shift is less than 100m V, the mobility is slightly degraded, but other properties are not clearly affected. The improved pFET performance is from the Vt reduction. The dipole co-integration also provides a novel method for Vt definition via dipole Vt compensation. Our selective dipole enablement can implement near bandedge (BE) multi- Vt for high performance application.

Details

Database :
OpenAIRE
Journal :
2020 IEEE Symposium on VLSI Technology
Accession number :
edsair.doi...........0325658de271cb045bd8e65882c029ed