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Low voltage operation a-Si:H thin film transistors with very thin PECVD a-SiO2 gate dielectric
- Source :
- Journal of Non-Crystalline Solids. 115:144-146
- Publication Year :
- 1989
- Publisher :
- Elsevier BV, 1989.
-
Abstract
- In the present paper are shown the characteristics of devices succesfully employing low temperature plasma deposited a-SiO2 as gate insulator with thickness of 40 and 18 nm. They show a very sharp field effect conductivity onset and an on/off current ratio of about 8 orders of magnitude. Due to the very low insulator thickness it is possible to operate these devices in the range between -2 and 5V with on current of the order of 10−5A.
- Subjects :
- Materials science
business.industry
Gate dielectric
Field effect
Low temperature plasma
Insulator (electricity)
Conductivity
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Plasma-enhanced chemical vapor deposition
Thin-film transistor
Materials Chemistry
Ceramics and Composites
Optoelectronics
business
Low voltage
Subjects
Details
- ISSN :
- 00223093
- Volume :
- 115
- Database :
- OpenAIRE
- Journal :
- Journal of Non-Crystalline Solids
- Accession number :
- edsair.doi...........03361031de454999a3814576ed327893