Electron spin resonance study of defects in Si‐SiO2structures induced by As+ion implantation

MLA

Andre Stesmans, et al. “Electron Spin Resonance Study of Defects in Si‐SiO2structures Induced by As+ion Implantation.” Journal of Applied Physics, vol. 55, Mar. 1984, pp. 1551–57. EBSCOhost, https://doi.org/10.1063/1.333413.

APA

Andre Stesmans, R. F. DeKeersmaecker, J. Witters, & J. Braet. (1984). Electron spin resonance study of defects in Si‐SiO2structures induced by As+ion implantation. Journal of Applied Physics, 55, 1551–1557. https://doi.org/10.1063/1.333413

Chicago

Andre Stesmans, R. F. DeKeersmaecker, J. Witters, and J. Braet. 1984. “Electron Spin Resonance Study of Defects in Si‐SiO2structures Induced by As+ion Implantation.” Journal of Applied Physics 55 (March): 1551–57. doi:10.1063/1.333413.