Characteristics of InGaP/InGaAs Pseudomophic Field-Effect Transistors with Modulated InGaAs Doping Channels

Authors :: Yi-Ting Chao
Wen-Chau Liu
Syuan-Hao Liou
Jung-Hui Tsai
Pao-Sheng Lin
Source :: Science of Advanced Materials. 10:632-635
Publication Year :: 2018
Publisher :: American Scientific Publishers, 2018.

Subjects :: 010302 applied physics
Materials science
business.industry
Doping
Electrical engineering
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
0103 physical sciences
Optoelectronics
General Materials Science
Field-effect transistor
0210 nano-technology
business

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