Plasmon – Phonon interaction in ZnSnSb2 + Mn semiconductors

Semiconductors of II-IV-V2 type with chalcopyrite structure have been studied for several decades. Due to advances in materials synthesis technologies, and doping with various elements, the possibilities of their application have expanded. In this paper, polycrystalline ZnSnSb2 + Mn was examined with the aim to explain the connection of its high free carrier concentration with the material structure and influence on optical properties. Two samples of Zn1-xMnxSnSb2 with different compositions (x = 0.027 and x = 0.076) and significant difference in carrier concentrations were analyzed. Their structural properties were examined by x-ray diffraction, optical microscopy, and AFM. The existence of several different phases - ZnSnSb2, ZnSb, SnSb, and small amounts of Sn and MnSb, as well as very complex microstructures, were registered. It was found that the high free carrier concentrations are caused by a large number of defects, especially zinc vacancies. Optical properties were analyzed using IR spectroscopy at room temperature. Based on the analysis of IR reflection spectra, the presence of plasmon - phonons interaction was registered. It was determined that three ZnSnSb2 phonons of B2 symmetry interact with plasma, which then leads to the change of their positions. A detailed analysis of this interaction provides insight into the behavior of some other material parameters. Also, vibration modes of ZnSb and SnSb phases were registered on the spectra. Knowledge of phonon behavior and their interaction with plasma is important for possible applications, especially as a thermoelectric material.