Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width

Authors :: Ziyue Zhao
Xue-Feng Zheng
Ling Yang
Lixin Guo
Minhan Mi
Yue Hao
Bin Hou
Xiaohua Ma
Meng Zhang
Sheng Wu
Source :: Applied Physics Express. 12:114001
Publication Year :: 2019
Publisher :: IOP Publishing, 2019.

Subjects :: Materials science
business.industry
Flatness (systems theory)
Transconductance
General Engineering
General Physics and Astronomy
Optoelectronics
High-electron-mobility transistor
business

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