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Lateral RF MEMS Switch Based on Surface Micromachining Process
- Source :
- Key Engineering Materials. 483:457-460
- Publication Year :
- 2011
- Publisher :
- Trans Tech Publications, Ltd., 2011.
-
Abstract
- In this paper, a novel RF MEMS switch driven by combs with low insertion loss is presented. The developed SPST RF MEMS switch with a lateral resistive contact and gold structure layer on a silicon substrate has been fabricated by surface micromachining process. The RF performance of the switch indicates an insertion loss below 0.30 dB at 20 GHz, a return loss better than 20 dB and isolation greater than 30 dB. Good RF characteristics have been achieved by the large contact area and a lateral Au-to-Au resistive contact.
- Subjects :
- Microelectromechanical systems
Resistive touchscreen
Materials science
Silicon
business.industry
Mechanical Engineering
Electrical engineering
chemistry.chemical_element
Substrate (electronics)
Surface micromachining
chemistry
Mechanics of Materials
Return loss
Optoelectronics
Insertion loss
General Materials Science
business
Contact area
Subjects
Details
- ISSN :
- 16629795
- Volume :
- 483
- Database :
- OpenAIRE
- Journal :
- Key Engineering Materials
- Accession number :
- edsair.doi...........03d21629bd0e3933ccf6ead93bc0eefe