Globally Aligned, Wafer-Scale Deposition of Carbon Nanotubes Via Interfacial Assembly

Floating evaporative self-assembly (FESA) is a solution-based technique for fabricating highly-aligned semiconducting carbon nanotube films.1,2 Field-effect transistors (FETs) based on carbon nanotubes aligned via FESA have exhibited current densities exceeding that of GaAs and Si, demonstrating the promise of this technique.3 However, the global uniformity of FESA films is poor, as the films are composed of stripes of aligned and randomly oriented carbon nanotubes. Additionally, this technique is inherently difficult to scale. In the work presented here, we demonstrate a scalable technique to overcome the shortcomings of FESA and to achieve globally uniform films of aligned carbon nanotubes at desirable packing densities for FETs. In our technique, carbon nanotubes are continuously aligned across target substrates by lifting the substrates through a flowing nanotube ink/water interface. The ink/water interface collects and confines the nanotubes, which is vital to achieving a high degree of alignment. Polarized Raman spectroscopy mapping is used to quantify the degree of alignment in the resulting aligned nanotube films. The full width at half maximum (FWHM) of the alignment distribution within the films is 6.0° measured across a 1 mm2 area. We control the aligned carbon nanotube packing density from 0.2 to 59 µm-1 by varying the ink concentration from 0.1 to 100 µg mL-1. Using optimized conditions, we demonstrate the scalability of this technique by aligning carbon nanotubes across a 100 mm wide wafer. Charge transport measurements are performed using FETs with the aligned carbon nanotube films as the active channels, and the performance is compared to FETs based on FESA films. 1. Jinkins, K., R. et al. Nanotube Alignment Mechanism in Floating Evaporative Self-Assembly. Langmuir 33, 13407–13414 (2017). 2. Joo, Y., Brady, G. J., Arnold, M. S. & Gopalan, P. Dose-Controlled, Floating Evaporative Self-assembly and Alignment of Semiconducting Carbon Nanotubes from Organic Solvents. Langmuir 30, 3460–3466 (2014). 3. Brady, G. J. et al. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs. Sci. Adv. 2, (2016).