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Numerical investigation of a SiGe HBT electro-optic modulator
- Source :
- 2009 IEEE/LEOS Winter Topicals Meeting Series.
- Publication Year :
- 2009
- Publisher :
- IEEE, 2009.
-
Abstract
- We analyzed an electro-optic modulator consisting of a heterojunction bipolar transistor (HBT) with graded SiGe composition in the base. Simulation shows single mode operation is attainable with an interaction length Lp of 40.8μm.
Details
- Database :
- OpenAIRE
- Journal :
- 2009 IEEE/LEOS Winter Topicals Meeting Series
- Accession number :
- edsair.doi...........043ad70a951ea47272eed6a9d467434c
- Full Text :
- https://doi.org/10.1109/leoswt.2009.4771632