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Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy
- Source :
- Applied Physics Letters. 103:102102
- Publication Year :
- 2013
- Publisher :
- AIP Publishing, 2013.
-
Abstract
- Three-dimensional distribution of impurities (boron, phosphorus, oxygen, and copper) at Σ3{111} grain boundaries was determined in a Czochralski-grown silicon single crystal by laser-assisted atom probe tomography (APT) combined with transmission electron microscopy, with a detection limit as low as the order of 0.001 at. %. The location of a boundary was determined by APT even when the boundary was not contaminated. Unlike the boundaries in multicrystalline silicon grown by the casting method, the impurities did not segregate at the boundaries even when the impurity concentrations were high. The gettering ability of the boundaries was discussed.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 103
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........04424bdfe9ddd98dca2babaada6527aa
- Full Text :
- https://doi.org/10.1063/1.4820140