Back to Search Start Over

Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Authors :
Seiji Takeda
Yuki Tokumoto
Koji Inoue
Naoki Ebisawa
Yasuyoshi Nagai
Yasuo Shimizu
Hisashi Takamizawa
Ichiro Yonenaga
Kaihei Inoue
Kentaro Kutsukake
Yutaka Ohno
Hideto Yoshida
Source :
Applied Physics Letters. 103:102102
Publication Year :
2013
Publisher :
AIP Publishing, 2013.

Abstract

Three-dimensional distribution of impurities (boron, phosphorus, oxygen, and copper) at Σ3{111} grain boundaries was determined in a Czochralski-grown silicon single crystal by laser-assisted atom probe tomography (APT) combined with transmission electron microscopy, with a detection limit as low as the order of 0.001 at. %. The location of a boundary was determined by APT even when the boundary was not contaminated. Unlike the boundaries in multicrystalline silicon grown by the casting method, the impurities did not segregate at the boundaries even when the impurity concentrations were high. The gettering ability of the boundaries was discussed.

Details

ISSN :
10773118 and 00036951
Volume :
103
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........04424bdfe9ddd98dca2babaada6527aa
Full Text :
https://doi.org/10.1063/1.4820140