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Reduced contact resistance of a-IGZO thin film transistors with inkjet-printed silver electrodes
- Source :
- Journal of Physics D: Applied Physics. 51:165103
- Publication Year :
- 2018
- Publisher :
- IOP Publishing, 2018.
-
Abstract
- In this study, high performance amorphous In–Ga–Zn–O (a-IGZO) TFTs were successfully fabricated with inkjet-printed silver source-drain electrodes. The results showed that increased channel thickness has an improving trend in the properties of TFTs due to the decreased contact resistance. Compared with sputtered silver TFTs, devices with printed silver electrodes were more sensitive to the thickness of active layer. Furthermore, the devices with optimized active layer showed high performances with a maximum saturation mobility of 8.73 cm2 V−1 S−1 and an average saturation mobility of 6.97 cm2 V−1 S−1, I on/I off ratio more than 107 and subthreshold swing of 0.28 V/decade, which were comparable with the analogous devices with sputtered electrodes.
- Subjects :
- 010302 applied physics
Materials science
Acoustics and Ultrasonics
business.industry
Contact resistance
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Amorphous solid
Active layer
Thin-film transistor
Subthreshold swing
0103 physical sciences
Electrode
Optoelectronics
0210 nano-technology
Saturation (chemistry)
business
Communication channel
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 51
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........046f09a45f7cde6439b4cc5d8c4a55aa