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Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

Authors :
Rong Zhang
Xu Cen
Bin Liu
Yu Junchi
Tao Tao
Youdou Zheng
Zili Xie
Qi Wang
Xiangqian Xiu
Yugang Zhou
Ting Zhi
Source :
Chinese Physics Letters. 36:088501
Publication Year :
2019
Publisher :
IOP Publishing, 2019.

Abstract

GaN-based micro light emitting diodes (micro-LEDs) on silicon (Si) substrates with 40 μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques. From current-voltage curves, the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10 −8 A/cm 2 indicate good electrical characteristics. As the injection current increases, the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays, because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs. Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures, the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.

Details

ISSN :
17413540 and 0256307X
Volume :
36
Database :
OpenAIRE
Journal :
Chinese Physics Letters
Accession number :
edsair.doi...........04ef656c713a32b2875b95d89c562859