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Polymer Dielectrics and Orthogonal Solvent Effects for High-Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors
- Source :
- ETRI Journal. 33:887-896
- Publication Year :
- 2011
- Publisher :
- Wiley, 2011.
-
Abstract
- We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic fieldeffect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.
- Subjects :
- chemistry.chemical_classification
Materials science
Organic field-effect transistor
General Computer Science
business.industry
Transistor
Gate dielectric
Dielectric
Polymer
Electronic, Optical and Magnetic Materials
law.invention
chemistry
law
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
Solvent effects
business
Electronic circuit
Subjects
Details
- ISSN :
- 12256463
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- ETRI Journal
- Accession number :
- edsair.doi...........05482c31e83f97175ce1e9c30c658f14