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Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup
- Source :
- Thin Solid Films. 670:105-112
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N−1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.
- Subjects :
- 010302 applied physics
Microelectromechanical systems
Materials science
Piezoelectric coefficient
business.industry
Metals and Alloys
02 engineering and technology
Surfaces and Interfaces
Substrate (electronics)
Nitride
021001 nanoscience & nanotechnology
01 natural sciences
7. Clean energy
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Amorphous solid
Ellipsometry
Sputtering
0103 physical sciences
Materials Chemistry
Optoelectronics
Thin film
0210 nano-technology
business
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 670
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........055eeea0ad79526ea80c5f6e9b102b75