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Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon
- Source :
- physica status solidi (a). 216:1800986
- Publication Year :
- 2019
- Publisher :
- Wiley, 2019.
- Subjects :
- Materials science
Deep-level transient spectroscopy
Silicon
Annealing (metallurgy)
Transition metal dioxygen complex
Kinetics
chemistry.chemical_element
Surfaces and Interfaces
Condensed Matter Physics
Photochemistry
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
Materials Chemistry
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 18626319 and 18626300
- Volume :
- 216
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........0595adfa302cbc5d1e47c9b045c1cc6d
- Full Text :
- https://doi.org/10.1002/pssa.201800986