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Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting
- Source :
- 2012 38th IEEE Photovoltaic Specialists Conference.
- Publication Year :
- 2012
- Publisher :
- IEEE, 2012.
-
Abstract
- We report here enhanced solar energy harvesting using a hybrid solar cell with silicon solar cells (visible-infrared light) on bottom and an InGaN solar cell (UV light) on top. The InGaN solar cell with 30 QW periods has peak external quantum efficiency (EQE) of 40 % at 380 nm, an open circuit voltage (V oc ) of 2.0 V, a short circuit current (I sc ) of 0.8 mA/cm2, and fill factor of 55%. We have demonstrated that the application of an InGaN “active window” to a silicon solar cell counterbalances the encapsulation power loss typically suffered during production of a solar panel
Details
- Database :
- OpenAIRE
- Journal :
- 2012 38th IEEE Photovoltaic Specialists Conference
- Accession number :
- edsair.doi...........059f09f80a1464c301f3373149eb7941