Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon

Epi-side down bonding on a silicon substrate of AlGaAs/GaAs microdisk lasers is presented. A heterostructure with coupled large optical cavities enables location of an InGaAs quantum dot active region at a distance of ∼1 µm from the heterostructure surface. The thermal resistance was reduced to 0.2 and 0.1 K mW−1 for disks of 30 and 50 µm in diameter, respectively. The maximum continuous-wave power limited by the thermal rollover is more than doubled after bonding.