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Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon
- Source :
- Semiconductor Science and Technology. 37:075010
- Publication Year :
- 2022
- Publisher :
- IOP Publishing, 2022.
-
Abstract
- Epi-side down bonding on a silicon substrate of AlGaAs/GaAs microdisk lasers is presented. A heterostructure with coupled large optical cavities enables location of an InGaAs quantum dot active region at a distance of ∼1 µm from the heterostructure surface. The thermal resistance was reduced to 0.2 and 0.1 K mW−1 for disks of 30 and 50 µm in diameter, respectively. The maximum continuous-wave power limited by the thermal rollover is more than doubled after bonding.
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........065822203ab75993e152a107e3660dc2