Cite
SnO2: rGO transparent semiconducting thin films under annealing by hydrazine—modification of optical gap and electrical resistance
MLA
P. Shayeghi Sabzevar, et al. “SnO2: RGO Transparent Semiconducting Thin Films under Annealing by Hydrazine—modification of Optical Gap and Electrical Resistance.” Journal of Materials Science: Materials in Electronics, vol. 34, Mar. 2023. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........06be63b48f71e66848085769052e3bb1&authtype=sso&custid=ns315887.
APA
P. Shayeghi Sabzevar, M. M. Bagheri-Mohagheghi, & A. Shirpay. (2023). SnO2: rGO transparent semiconducting thin films under annealing by hydrazine—modification of optical gap and electrical resistance. Journal of Materials Science: Materials in Electronics, 34.
Chicago
P. Shayeghi Sabzevar, M. M. Bagheri-Mohagheghi, and A. Shirpay. 2023. “SnO2: RGO Transparent Semiconducting Thin Films under Annealing by Hydrazine—modification of Optical Gap and Electrical Resistance.” Journal of Materials Science: Materials in Electronics 34 (March). http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........06be63b48f71e66848085769052e3bb1&authtype=sso&custid=ns315887.