Cite
Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor*
MLA
Ya-Mei Dou, et al. “Temperature-Dependent Subband Mobility Characteristics in n-Doped Silicon Junctionless Nanowire Transistor*.” Chinese Physics B, vol. 28, June 2019, p. 066804. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........0727da7de19803a58f10ff89d14c39d6&authtype=sso&custid=ns315887.
APA
Ya-Mei Dou, Yang-Yan Guo, Fuhua Yang, Xiao-Di Zhang, Weihua Han, Xin-Yu Wu, & Xiao-Song Zhao. (2019). Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor*. Chinese Physics B, 28, 066804.
Chicago
Ya-Mei Dou, Yang-Yan Guo, Fuhua Yang, Xiao-Di Zhang, Weihua Han, Xin-Yu Wu, and Xiao-Song Zhao. 2019. “Temperature-Dependent Subband Mobility Characteristics in n-Doped Silicon Junctionless Nanowire Transistor*.” Chinese Physics B 28 (June): 066804. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........0727da7de19803a58f10ff89d14c39d6&authtype=sso&custid=ns315887.