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Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods
- Source :
- IEEE Transactions on Nuclear Science. 65:579-582
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- We evaluated the electrical characteristics of two different AlGaN/GaN high-electron mobility transistors (HEMTs) for the 5-MeV proton irradiation effects. The difference of the HEMTs originates from the isolation methods, such as mesa etching and nitrogen ion implantation. At a proton fluence of $1 \times 10^{14}$ p/cm2, the saturation drain currents of two devices are reduced by 50% and 11% for the mesa etching and the nitrogen ion implantation, respectively. The displacement damages are believed to degrade the electrical characteristics of AlGaN/GaN HEMTs. AlGaN/GaN HEMTs with nitrogen ion implantation isolation show relatively higher radiation hardness than those with mesa etching isolation. The reason is that plasma etching easily damages the surface of mesa sidewall and causes more defects by proton irradiation.
- Subjects :
- 010302 applied physics
Nuclear and High Energy Physics
Plasma etching
Materials science
Proton
010308 nuclear & particles physics
business.industry
Transistor
Wide-bandgap semiconductor
nutritional and metabolic diseases
01 natural sciences
Fluence
law.invention
Ion implantation
Nuclear Energy and Engineering
law
0103 physical sciences
Optoelectronics
cardiovascular diseases
Irradiation
Electrical and Electronic Engineering
business
Radiation hardening
Subjects
Details
- ISSN :
- 15581578 and 00189499
- Volume :
- 65
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi...........08c9b23cc7080fbc0125c3f885b14a6a