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ZnO thin films produced by the RF magnetron sputtering

Authors :
Xin Wang
Yali Du
Hanchen Liu
Jing Wang
Huawa Yu
Bin Gao
Yangan Yan
Source :
EMEIT
Publication Year :
2011
Publisher :
IEEE, 2011.

Abstract

ZnO thin films with (002) orientation have been deposited on Si(100) substrate by radio frequency (RF) magnetron sputtering technique. The influence of RF power and oxygen ratio on the the grain size-, the residual stress and optical properties was investigated by X-ray diffraction, transmission spectra and photoluminescence spectra. The results show that the ZnO film deposited with sputtering power (100W) and oxygen ratio(60%), can obtain its best c-axis orientation and crystallization and that tension stress of the film reaches the lowest, and a strong UV photoluminescence(PL) peak and a weak blue emission peak were observed.

Details

Database :
OpenAIRE
Journal :
Proceedings of 2011 International Conference on Electronic & Mechanical Engineering and Information Technology
Accession number :
edsair.doi...........08e62e48020ff8edc5775878702d4a74
Full Text :
https://doi.org/10.1109/emeit.2011.6023604