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Ti-doping induced antiferroelectric to ferroelectric phase transition and electrical properties in Sm-PbZrO3 thin films
- Source :
- Current Applied Physics. 24:12-18
- Publication Year :
- 2021
- Publisher :
- Elsevier BV, 2021.
-
Abstract
- The antiferroelectric (Pb0.985Sm0.01) (Zr1-xTix)O3 (Ti-PSZO) thin films were synthesized on Pt(111)/Ti/SiO2/Si substrates using a chemical solution deposition method. The films were crystallized in the perovskite phase with a preferential orientation along (111) direction. With Ti doping in PSZO, a gradual transformation from antiferroelectric to ferroelectric phase transition was noticed at room temperature owing to the Ti doping induced lattice distortion. The phase transition has been confirmed through the P - E hysteresis loops, X-ray diffraction (peak shifting), capacitance-voltage measurements, and Raman scattering analysis. The thin film with Ti = 0.15 doping displayed a ferroelectric behavior with high dielectric constant and large dielectric tunability of about 62%. Also, Ti doping altered the Curie temperature (Tc) and enhanced the order of dielectric diffuseness. It is believed that Ti-doping in PSZO is an effective way to induce an antiferroelectric - ferroelectric phase transition and to tailor the electrical characteristics of PSZO thin films.
- Subjects :
- 010302 applied physics
Phase transition
Materials science
Condensed matter physics
Doping
General Physics and Astronomy
02 engineering and technology
Dielectric
021001 nanoscience & nanotechnology
01 natural sciences
Ferroelectricity
Phase (matter)
0103 physical sciences
Curie temperature
General Materials Science
Thin film
0210 nano-technology
High-κ dielectric
Subjects
Details
- ISSN :
- 15671739
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- Current Applied Physics
- Accession number :
- edsair.doi...........0958f2df2276f1cfa0a21a95754176da