Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition

Bi-axial tensile strained Si epilayers with extremely high lattice mismatch strain up to 2.13% were grown from a disilane (Si2H6) precursor on Si1-xGex/Si(100) VSs by Reduced Pressure Chemical Vapour Deposition. We discuss the conditions under which fully strained Si epilayers of the required thickness can be grown. By demonstrating a fully strained 23 nm Si layer on a fully relaxed Si0.45Ge0.55(100) VS, this work indicates the potential for realizing high performance s-Si n- and p-MOSFETs on standard Si(100) substrates. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)