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Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture
- Source :
- Vacuum. 119:151-158
- Publication Year :
- 2015
- Publisher :
- Elsevier BV, 2015.
-
Abstract
- The etch characteristics of TiN hard mask patterned CoFeB thin films were investigated using an inductively coupled plasma reactive ion etching in a CH3COOH/Ar gas mixture. The etch characteristics of CoFeB magnetic thin film and TiN hard masks were investigated as a function of gas mixture concentration, coil rf power, dc-bias voltage and gas pressure. As CH3COOH concentration in the CH3COOH/Ar gas mixture increased, the etch rates of CoFeB films and degree of anisotropy in the etch profile decreased, while increased coil rf-power and dc bias voltage and reduced gas pressure increased the etch rate and improved the etch profile. Additionally, a thick hydrocarbon layer was formed on the film surface at a dc-bias voltage of 100 V. X-ray photoelectron spectroscopy and optical emission spectroscopy analyses of the etched films at various CH3COOH concentrations suggest that CoFeB thin films etched in a CH3COOH/Ar gas mixture follow a physical sputtering etch mechanism assisted by oxidation of the film and formation of a protective inhibition layer on the film surface. Etching of TiN patterned CoFeB films with a high degree of anisotropy was accomplished without redepositions or etch residues when conducted under high sputtering conditions.
- Subjects :
- Materials science
fungi
technology, industry, and agriculture
Analytical chemistry
chemistry.chemical_element
macromolecular substances
Condensed Matter Physics
Surfaces, Coatings and Films
stomatognathic system
chemistry
X-ray photoelectron spectroscopy
Etching (microfabrication)
Sputtering
Inductively coupled plasma
Thin film
Reactive-ion etching
Tin
Instrumentation
Layer (electronics)
Subjects
Details
- ISSN :
- 0042207X
- Volume :
- 119
- Database :
- OpenAIRE
- Journal :
- Vacuum
- Accession number :
- edsair.doi...........0afae11220caf2e4dde88174ca302f35
- Full Text :
- https://doi.org/10.1016/j.vacuum.2015.05.018