Electron-paramagnetic-resonance study of the(100)Si/Si3N4interface

The $(100){\mathrm{S}\mathrm{i}/\mathrm{S}\mathrm{i}}_{3}{\mathrm{N}\mathrm{}}_{4}$ interface, formed by the deposition of ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}$ layers on bulk (100) Si by distributed electron-cyclotron-resonance plasma-enhanced chemical vapor deposition, has been studied by electron-paramagnetic-resonance spectroscopy. Only one interface defect, the ${P}_{b0}$ center, characterized by trigonal point symmetry and principal values of the g tensor, ${g}_{\ensuremath{\parallel}}=2.0018\ifmmode\pm\else\textpm\fi{}0.0002$ and ${g}_{\ensuremath{\perp}}=2.0089\ifmmode\pm\else\textpm\fi{}0.0002$, has been detected. Its area concentration is of the order of $(2--5)\ifmmode\times\else\texttimes\fi{}{10}^{11} {\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}.$ The characteristic defect of the $(100){\mathrm{S}\mathrm{i}/\mathrm{S}\mathrm{i}\mathrm{O}}_{2}$ interface, the ${P}_{b1}$ center, is not observed. The ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}$ layers contain one main native bulk defect, the K center, at concentrations of $5\ifmmode\times\else\texttimes\fi{}{10}^{17} {\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}.$