Carrier lifetime measurement for determination of recombination rates and doping levels of III‐V semiconductor light sources

A novel method is described for measuring the carrier lifetimes in double heterostructure light‐emitting diodes (LED’s) and lasers. The improved resolution of the technique permits the first reported measurement of the carrier dependence of the radiative recombination coefficient. The technique also provides a reliable measurement of the active region doping level which is in very good agreement with the values calculated from the composition of the growth solutions.