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Enhanced electrical and fatigue properties of La-modified (100)-oriented PZT thin films with various Zr/Ti ratio
- Source :
- Journal of Materials Science: Materials in Electronics. 30:3585-3594
- Publication Year :
- 2019
- Publisher :
- Springer Science and Business Media LLC, 2019.
-
Abstract
- Pb1−x(LaxZryTi1−y)O3 (PLZT) (x = 0%, 2%, 4%; y = 0.45, 0.52, 0.60) thin films were fabricated by sol–gel process to investigate the effects of La-doped and Zr/Ti ratio on crystalline orientation, microstructure, and electrical properties of lead zirconate titanate films. The results of X-ray diffraction analysis showed that the orientation of the films with various La concentration change with the Zr/Ti ratio. The Zr-rich composition (y = 0.60) with the fixed 2% La doping concentration has the most (100) preferential orientation. Scanning electron microscope analysis showed that the films exhibit dense perovskite structure when the doping concentration was less than 4%. The maximum dielectric constant (1364.65 at 100 Hz), optimized ferroelectric properties, and a low leakage current density of 8.63 × 10−8 A cm−2 were obtained for 2% La-doped film with a Zr/Ti ratio of 60/40. The lowest value of coercive field (Ec) was generated in the film fabricated with a Zr/Ti ratio of 52/48 when the La doping concentration was 2%. Fatigue resistance was also improved with 2% La dopant for the films processed by a Zr/Ti ratio of 52/48 and 60/40.
- Subjects :
- 010302 applied physics
Materials science
Dopant
Scanning electron microscope
Doping
Analytical chemistry
Dielectric
Condensed Matter Physics
Microstructure
Lead zirconate titanate
01 natural sciences
Ferroelectricity
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
0103 physical sciences
Electrical and Electronic Engineering
Thin film
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........0b5ddf23dcb5ce55be489842c3768811