Analysis of recombination centers near an interface of a metal–SiO2–Si structure by double carrier pulse deep-level transient spectroscopy

MLA

Tomohiko Hara, and Yoshio Ohshita. “Analysis of Recombination Centers near an Interface of a Metal–SiO2–Si Structure by Double Carrier Pulse Deep-Level Transient Spectroscopy.” AIP Advances, vol. 12, Sept. 2022, p. 095316. EBSCOhost, https://doi.org/10.1063/5.0106319.

APA

Tomohiko Hara, & Yoshio Ohshita. (2022). Analysis of recombination centers near an interface of a metal–SiO2–Si structure by double carrier pulse deep-level transient spectroscopy. AIP Advances, 12, 095316. https://doi.org/10.1063/5.0106319

Chicago

Tomohiko Hara, and Yoshio Ohshita. 2022. “Analysis of Recombination Centers near an Interface of a Metal–SiO2–Si Structure by Double Carrier Pulse Deep-Level Transient Spectroscopy.” AIP Advances 12 (September): 095316. doi:10.1063/5.0106319.