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Effect of TiO2 doping on structural and electrical properties of melt-quench V2−xTixO5−δ, 0.15 ≤ x ≤ 0.30 systems

Authors :
Kulvir Singh
Savidh Khan
Source :
Journal of Materials Science: Materials in Electronics. 32:12594-12607
Publication Year :
2021
Publisher :
Springer Science and Business Media LLC, 2021.

Abstract

Compositions of V2−xTixO5−δ (x = 0.15, 0.20, 0.25, and 0.30) are synthesized by the melt-quench technique. Different experimental techniques are used to study structural, optical, thermal, and electrical properties. Various physical parameters are also calculated using apparent density to support the conduction mechanism of the prepared samples. X-ray diffraction (XRD) is confirmed the formation of orthorhombic V2O5 phase. The doping of TiO2 supports the transfer of VO5 structural units into VO4 units as confirmed by Fourier transform infrared (FTIR) and Raman spectroscopy. The optical band gap (Eg) and Urbach energy (EU) of the TiO2-doped vanadium samples are obtained with the help of diffused reflectance spectra (DRS). A marginally decreasing trend in the optical band gap (2.28–2.20 eV) is observed with dopant content. X-ray photoelectron spectroscopy measurement is confirmed that vanadium is present in mixed state, i.e., V5+ and V4+ which leads to the increase in conductivity of the doped samples. The highest DC conductivity is observed about 1.12 S m−1 at 400 °C.

Details

ISSN :
1573482X and 09574522
Volume :
32
Database :
OpenAIRE
Journal :
Journal of Materials Science: Materials in Electronics
Accession number :
edsair.doi...........0be12356604225304e9b33014752faaf
Full Text :
https://doi.org/10.1007/s10854-021-05896-5