Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial $\pmb{\beta}$ -Ga2O3 Grown by MOVPE

The influence of substrate miscut on the surface morphology and Hall mobility at optimized growth conditions of $\beta$ -Ga 2 O 3 layers was investigated. The results demonstrate that the surface morphology and the Hall mobility are impacted by the miscut angle of $\beta$ -Ga 2 O 3 substrates. For substrates with miscut angle of 6° and a growth rate of about 4 nm/min, a morphology with step bunches was observed and a Hall mobility of the layer of $115\pm 10$ cm2/(Vs) was obtained. Using substrates with 4° miscut, step-flow growth mode and an enhancement of the Hall mobility about $135\pm 10\ \mathrm{cm}^{2}/(\mathrm{Vs})$ was achieved.