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High Thermoelectric Performance of New Rhombohedral Phase of GeSe stabilized through Alloying with AgSbSe2
- Source :
- Angewandte Chemie International Edition. 56:14113-14118
- Publication Year :
- 2017
- Publisher :
- Wiley, 2017.
-
Abstract
- GeSe is a IV-VI semiconductor, like the excellent thermoelectric materials PbTe and SnSe. Orthorhombic GeSe has been predicted theoretically to have good thermoelectric performance but is difficult to dope experimentally. Like PbTe, rhombohedral GeTe has a multivalley band structure, which is ideal for thermoelectrics and also promotes the formation of Ge vacancies to provide enough carriers for electrical transport. Herein, we investigate the thermoelectric properties of GeSe alloyed with AgSbSe2, which stabilizes a new rhombohedral structure with higher symmetry that leads to a multivalley Fermi surface and a dramatic increase in carrier concentration. The zT of GeAg0.2Sb0.2Se1.4 reaches 0.86 at 710 K, which is 18 times higher than that of pristine GeSe and over four times higher than doped orthorhombic GeSe. Our results open a new avenue towards developing novel thermoelectric materials via crystal phase engineering using a strategy of entropy stabilization of high symmetry alloys.
- Subjects :
- Materials science
Condensed matter physics
business.industry
Alloy
Doping
Fermi surface
02 engineering and technology
General Chemistry
engineering.material
010402 general chemistry
021001 nanoscience & nanotechnology
Thermoelectric materials
01 natural sciences
Catalysis
0104 chemical sciences
Crystallography
Semiconductor
Thermoelectric effect
engineering
Orthorhombic crystal system
0210 nano-technology
business
Electronic band structure
Subjects
Details
- ISSN :
- 14337851
- Volume :
- 56
- Database :
- OpenAIRE
- Journal :
- Angewandte Chemie International Edition
- Accession number :
- edsair.doi...........0cbdf41ad62e942552b0bc9b44bd9f23